Toshiba N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 255 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.16mm, Maximum Operating Temperature: +150 °C
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Toshiba N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1
Specifications of Toshiba N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1 | |
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