Infineon Silicon P-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK IPB120P04P4L03ATMA2, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0031 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon Silicon P-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK IPB120P04P4L03ATMA2
Specifications of Infineon Silicon P-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK IPB120P04P4L03ATMA2 | |
---|---|
Category | |
Instock | instock |
Last Updated