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Infineon Silicon P-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK IPB120P04P4L03ATMA2

About The 0031 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V

Infineon Silicon P-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK IPB120P04P4L03ATMA2, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0031 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon Silicon P-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK IPB120P04P4L03ATMA2

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon Silicon P-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK IPB120P04P4L03ATMA2

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Infineon Silicon P-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK IPB120P04P4L03ATMA2
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