Infineon N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220 FP IPA60R190E6XKSA1
About The 5V, Maximum Power Dissipation: 34 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.Infineon N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220 FP IPA60R190E6XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 440 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3
Infineon N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220 FP IPA60R190E6XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 440 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 34 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.65mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220 FP IPA60R190E6XKSA1
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Infineon N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220 FP IPA60R190E6XKSA1 | |
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