Vishay Dual N-Channel MOSFET, 21 A, 800 V, 3-Pin D2PAK, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.184 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: E Series, MPN: SIHB24N80AE-GE3
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Vishay Dual N-Channel MOSFET, 21 A, 800 V, 3-Pin D2PAK
Specifications of Vishay Dual N-Channel MOSFET, 21 A, 800 V, 3-Pin D2PAK | |
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