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Onsemi N-Channel MOSFET, 77 A, 600 V, 3-Pin TO-247 FCH041N60E

About The onsemi N-Channel MOSFET, 77 A, 600 V, 3-Pin TO-247 FCH041N60E, Mounting Type: Through Hole, Maximum Drain Source Resistance: 41 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 592 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 15

onsemi N-Channel MOSFET, 77 A, 600 V, 3-Pin TO-247 FCH041N60E, Mounting Type: Through Hole, Maximum Drain Source Resistance: 41 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 592 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 15.87mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Onsemi N-Channel MOSFET, 77 A, 600 V, 3-Pin TO-247 FCH041N60E

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Onsemi N-Channel MOSFET, 77 A, 600 V, 3-Pin TO-247 FCH041N60E

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Onsemi N-Channel MOSFET, 77 A, 600 V, 3-Pin TO-247 FCH041N60E
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