Toshiba N-Channel MOSFET, 63 A, 30 V, 8-Pin TSON TPN4R303NL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Minimum Gate Threshold Voltage: 1.3V, Maximum Power Dissipation: 34 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V
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Toshiba N-Channel MOSFET, 63 A, 30 V, 8-Pin TSON TPN4R303NL
Specifications of Toshiba N-Channel MOSFET, 63 A, 30 V, 8-Pin TSON TPN4R303NL | |
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