Nexperia P-Channel MOSFET, 2 A, 20 V, 3-Pin SOT-23 NX2301P,215
About The Nexperia P-Channel MOSFET, 2 A, 20 V, 3-Pin SOT-23 NX2301P,215, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 120 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 400 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Height: 1mm
Nexperia P-Channel MOSFET, 2 A, 20 V, 3-Pin SOT-23 NX2301P,215, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 120 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 0.5V, Maximum Power Dissipation: 400 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Height: 1mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Nexperia P-Channel MOSFET, 2 A, 20 V, 3-Pin SOT-23 NX2301P,215
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Nexperia P-Channel MOSFET, 2 A, 20 V, 3-Pin SOT-23 NX2301P,215 | |
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