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Infineon N-Channel MOSFET, 53 A, 30 V, 8-Pin TDSON BSC080N03LSGATMA1

About The 5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.Infineon N-Channel MOSFET, 53 A, 30 V, 8-Pin TDSON BSC080N03LSGATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 12 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2

Infineon N-Channel MOSFET, 53 A, 30 V, 8-Pin TDSON BSC080N03LSGATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 12 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.35mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 53 A, 30 V, 8-Pin TDSON BSC080N03LSGATMA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 53 A, 30 V, 8-Pin TDSON BSC080N03LSGATMA1

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Infineon N-Channel MOSFET, 53 A, 30 V, 8-Pin TDSON BSC080N03LSGATMA1
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