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Vishay N-Channel MOSFET, 73 A, 600 V, 3-Pin TO-247AC SiHG73N60E-GE3

About The 7mm, Length: 15.Vishay N-Channel MOSFET, 73 A, 600 V, 3-Pin TO-247AC SiHG73N60E-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 39 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 520 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 20

Vishay N-Channel MOSFET, 73 A, 600 V, 3-Pin TO-247AC SiHG73N60E-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 39 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 520 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 20.7mm, Length: 15.87mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Vishay N-Channel MOSFET, 73 A, 600 V, 3-Pin TO-247AC SiHG73N60E-GE3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay N-Channel MOSFET, 73 A, 600 V, 3-Pin TO-247AC SiHG73N60E-GE3

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Vishay N-Channel MOSFET, 73 A, 600 V, 3-Pin TO-247AC SiHG73N60E-GE3
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