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Infineon Silicon N-Channel MOSFET, 40 A, 40 V, 8-Pin PQFN 3 X 3 IPZ40N04S55R4ATMA1

About The 0054 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.4V

Infineon Silicon N-Channel MOSFET, 40 A, 40 V, 8-Pin PQFN 3 x 3 IPZ40N04S55R4ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0054 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.4V

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Infineon Silicon N-Channel MOSFET, 40 A, 40 V, 8-Pin PQFN 3 X 3 IPZ40N04S55R4ATMA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon Silicon N-Channel MOSFET, 40 A, 40 V, 8-Pin PQFN 3 X 3 IPZ40N04S55R4ATMA1

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Infineon Silicon N-Channel MOSFET, 40 A, 40 V, 8-Pin PQFN 3 X 3 IPZ40N04S55R4ATMA1
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    Infineon Silicon N-Channel MOSFET, 40 A, 40 V, 8-Pin PQFN 3 x 3 IPZ40N04S55R4ATMA1

    0054 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.4V.Infineon Silicon N-Channel MOSFET, 40 A, 40 V, 8-Pin PQFN 3 x 3 IPZ40N04S55R4ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.

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