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Nexperia N-Channel MOSFET, 100 A, 30 V, 3-Pin TO-220AB PSMN4R3-30PL,127

About The .3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2

Nexperia N-Channel MOSFET, 100 A, 30 V, 3-Pin TO-220AB PSMN4R3-30PL,127, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.15V, Minimum Gate Threshold Voltage: 1.3V, Maximum Power Dissipation: 103 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.3mm, Maximum Operating Temperature: +175 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Nexperia N-Channel MOSFET, 100 A, 30 V, 3-Pin TO-220AB PSMN4R3-30PL,127

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Nexperia N-Channel MOSFET, 100 A, 30 V, 3-Pin TO-220AB PSMN4R3-30PL,127

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Nexperia N-Channel MOSFET, 100 A, 30 V, 3-Pin TO-220AB PSMN4R3-30PL,127
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