onsemi N-Channel MOSFET, 12 A, 80 V, 8-Pin WDFN NVTFS6H888NTAG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 18 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Length: 3.15mm, Maximum Operating Temperature: +175 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi N-Channel MOSFET, 12 A, 80 V, 8-Pin WDFN NVTFS6H888NTAG
Specifications of Onsemi N-Channel MOSFET, 12 A, 80 V, 8-Pin WDFN NVTFS6H888NTAG | |
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