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ROHM Dual N-Channel MOSFET, 8 A, 40 V, 8-Pin TSMT-8 QH8KB6TCR

About The 0177 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V

ROHM Dual N-Channel MOSFET, 8 A, 40 V, 8-Pin TSMT-8 QH8KB6TCR, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0177 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

ROHM Dual N-Channel MOSFET, 8 A, 40 V, 8-Pin TSMT-8 QH8KB6TCR

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of ROHM Dual N-Channel MOSFET, 8 A, 40 V, 8-Pin TSMT-8 QH8KB6TCR

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ROHM Dual N-Channel MOSFET, 8 A, 40 V, 8-Pin TSMT-8 QH8KB6TCR
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