Vishay N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK 1212-8 SISA04DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.1 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 52 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Length: 3.15mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Vishay N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK 1212-8 SISA04DN-T1-GE3
Specifications of Vishay N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK 1212-8 SISA04DN-T1-GE3 | |
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