Infineon N-Channel MOSFET, 130 A, 150 V, 7-Pin D2PAK-7 IPB065N15N3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.8 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.31mm, Maximum Operating Temperature: +175 °C
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Infineon N-Channel MOSFET, 130 A, 150 V, 7-Pin D2PAK-7 IPB065N15N3GATMA1
Specifications of Infineon N-Channel MOSFET, 130 A, 150 V, 7-Pin D2PAK-7 IPB065N15N3GATMA1 | |
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