Infineon N-Channel MOSFET, 375 A, 60 V DirectFET ISOMETRIC IRF7749L1TRPBF
About The 15mm, Maximum Operating Temperature: +175 °C, Typical Gate Charge @ Vgs: 200 nC @ 10 V.5 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 125 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 9
Infineon N-Channel MOSFET, 375 A, 60 V DirectFET ISOMETRIC IRF7749L1TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.5 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 125 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 9.15mm, Maximum Operating Temperature: +175 °C, Typical Gate Charge @ Vgs: 200 nC @ 10 V
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 375 A, 60 V DirectFET ISOMETRIC IRF7749L1TRPBF
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Infineon N-Channel MOSFET, 375 A, 60 V DirectFET ISOMETRIC IRF7749L1TRPBF | |
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