Onsemi N-Channel MOSFET, 330 A, 40 V, 8-Pin LFPAK8 NTMJS0D9N04CLTWG
About The 2V, Maximum Power Dissipation: 167 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Length: 5mm, Maximum Operating Temperature: +175 °C.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1
onsemi N-Channel MOSFET, 330 A, 40 V, 8-Pin LFPAK8 NTMJS0D9N04CLTWG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 167 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Length: 5mm, Maximum Operating Temperature: +175 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi N-Channel MOSFET, 330 A, 40 V, 8-Pin LFPAK8 NTMJS0D9N04CLTWG
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Onsemi N-Channel MOSFET, 330 A, 40 V, 8-Pin LFPAK8 NTMJS0D9N04CLTWG | |
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