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Vishay Dual P-Channel MOSFET, 135 MA, 60 V, 6-Pin SC-89-6 SI1025X-T1-GE3

About The Vishay Dual P-Channel MOSFET, 135 mA, 60 V, 6-Pin SC-89-6 SI1025X-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 250 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Length: 1.7mm, Maximum Operating Temperature: +150 °C

Vishay Dual P-Channel MOSFET, 135 mA, 60 V, 6-Pin SC-89-6 SI1025X-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 250 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Length: 1.7mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Vishay Dual P-Channel MOSFET, 135 MA, 60 V, 6-Pin SC-89-6 SI1025X-T1-GE3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay Dual P-Channel MOSFET, 135 MA, 60 V, 6-Pin SC-89-6 SI1025X-T1-GE3

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Vishay Dual P-Channel MOSFET, 135 MA, 60 V, 6-Pin SC-89-6 SI1025X-T1-GE3
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