Idec 1 Channel Zener Barrier, Intrinsic Safety Barrier, Relay Output, ATEX

TE Connectivity, 1020 Thick Film Surface Mount Fixed Resistor 1% 2W - 3430H2F22KTE.

54mm Pitch, MPN: 61001011921.Wurth Elektronik WR-PHD Series Straight PCB Socket, 10-Contact, 1-Row, 2.

Bahco Sledgehammer with Rubber Handle, 1.1kg, Overall Length: 249.

TE Connectivity, 1020 Thick Film Surface Mount Fixed Resistor 1% 2W - 3430H2F2K0TE.

TE Connectivity, 1020 Thick Film Surface Mount Fixed Resistor 1% 2W - 3430H2F2R2TE.

SMC Pneumatic Piston Rod Cylinder - 40mm Bore, 300mm Stroke, C76 Series, Double Acting, MPN: 00120426.

Idec 1 Channel Zener Barrier, Intrinsic Safety Barrier, Relay Output, ATEX, Barrier Type: Relay Barrier, Maximum Voltage: 250V ac, Safety Current Resistance: 300Ω, Maximum Current: 14.2mA, Maximum Operating Temperature: +60°C, Minimum Operating Temperature: -20°C, Supply Voltage: 100 → 240V ac, Safety Voltage Maximum: 250 V ac, Series: EB3C, Operating Temperature Range: -20 → +60°C, MPN: EB3C-R01AN.

Vishay Dual P-Channel MOSFET, 135 mA, 60 V, 6-Pin SC-89-6 SI1025X-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 250 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Length: 1.7mm, Maximum Operating Temperature: +150 °C.

Idec 1 Channel Zener Barrier, Intrinsic Safety Barrier, Relay Output, ATEX, Barrier Type: Relay Barrier, Maximum Voltage: 250V ac, Safety Current Resistance: 300Ω, Maximum Current: 14.2mA, Maximum Operating Temperature: +60°C, Minimum Operating Temperature: -20°C, Supply Voltage: 100 → 240V ac, Safety Voltage Maximum: 250 V ac, Series: EB3C, Operating Temperature Range: -20 → +60°C, MPN: EB3C-R01AN.

7mm, Maximum Operating Temperature: +150 °C.Vishay Dual P-Channel MOSFET, 135 mA, 60 V, 6-Pin SC-89-6 SI1025X-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 250 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Length: 1.