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DiodesZetex N-Channel MOSFET, 320 MA, 100 V, 3-Pin E-Line Diodes Inc ZVN2110ASTZ

About The DiodesZetex N-Channel MOSFET, 320 mA, 100 V, 3-Pin E-Line Diodes Inc ZVN2110ASTZ, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.77mm, Maximum Operating Temperature: +150 °C

DiodesZetex N-Channel MOSFET, 320 mA, 100 V, 3-Pin E-Line Diodes Inc ZVN2110ASTZ, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 700 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 4.77mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

DiodesZetex N-Channel MOSFET, 320 MA, 100 V, 3-Pin E-Line Diodes Inc ZVN2110ASTZ

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of DiodesZetex N-Channel MOSFET, 320 MA, 100 V, 3-Pin E-Line Diodes Inc ZVN2110ASTZ

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DiodesZetex N-Channel MOSFET, 320 MA, 100 V, 3-Pin E-Line Diodes Inc ZVN2110ASTZ
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