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Infineon N-Channel MOSFET, 86 A, 30 V, 3-Pin DPAK IRFR3709ZTRPBF

About The 2 mO, Maximum Gate Threshold Voltage: 2.25V, Number of Elements per Chip: 1

Infineon N-Channel MOSFET, 86 A, 30 V, 3-Pin DPAK IRFR3709ZTRPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.2 mO, Maximum Gate Threshold Voltage: 2.25V, Number of Elements per Chip: 1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 86 A, 30 V, 3-Pin DPAK IRFR3709ZTRPBF

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Specifications of Infineon N-Channel MOSFET, 86 A, 30 V, 3-Pin DPAK IRFR3709ZTRPBF
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Last Updated December 12th, 2023 10:03 am

Infineon N-Channel MOSFET, 86 A, 30 V, 3-Pin DPAK IRFR3709ZTRPBF

Electronic Components & Power & Connectors

Discrete Semiconductors

Rating :- 9.81 /10

Votes :- 10

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Infineon N-Channel MOSFET, 86 A, 30 V, 3-Pin DPAK IRFR3709ZTRPBF

25V, Number of Elements per Chip: 1.2 mO, Maximum Gate Threshold Voltage: 2.

Electronic Components & Power & Connectors

Discrete Semiconductors

ebm-papst Fan Speed Controller for Use with EC Fans, 10 V dc, 1.1mA Max, Infinitely Variable

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Infineon N-Channel MOSFET, 86 A, 30 V, 3-Pin DPAK IRFR3709ZTRPBF

Infineon N-Channel MOSFET, 86 A, 30 V, 3-Pin DPAK IRFR3709ZTRPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.2 mO, Maximum Gate Threshold Voltage: 2.25V, Number of Elements per Chip: 1.

Electronic Components & Power & Connectors

Discrete Semiconductors