onsemi N-Channel MOSFET, 18 A, 60 V, 3-Pin DPAK RFD12N06RLESM9A, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 49 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 2.39mm, Length: 6.73mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi N-Channel MOSFET, 18 A, 60 V, 3-Pin DPAK RFD12N06RLESM9A
Specifications of Onsemi N-Channel MOSFET, 18 A, 60 V, 3-Pin DPAK RFD12N06RLESM9A | |
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