Onsemi N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-220F FCPF400N80Z
About The 36mm.5V, Maximum Power Dissipation: 35
onsemi N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-220F FCPF400N80Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 340 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 35.7 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.07mm, Length: 10.36mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-220F FCPF400N80Z
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Onsemi N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-220F FCPF400N80Z | |
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