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Infineon N-Channel MOSFET, 14 A, 30 V, 8-Pin SOIC IRF8721TRPBF

About The 35V, Maximum Power Dissipation: 2.Infineon N-Channel MOSFET, 14 A, 30 V, 8-Pin SOIC IRF8721TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 12

Infineon N-Channel MOSFET, 14 A, 30 V, 8-Pin SOIC IRF8721TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 12.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.35V, Minimum Gate Threshold Voltage: 1.35V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 14 A, 30 V, 8-Pin SOIC IRF8721TRPBF

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 14 A, 30 V, 8-Pin SOIC IRF8721TRPBF

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Infineon N-Channel MOSFET, 14 A, 30 V, 8-Pin SOIC IRF8721TRPBF
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