DiodesZetex N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 Diodes Inc DMN2300UFB4-7B
About The 05mm, Maximum Operating Temperature: +150 °C.95V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Length: 1
DiodesZetex N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 Diodes Inc DMN2300UFB4-7B, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.95V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Length: 1.05mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
DiodesZetex N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 Diodes Inc DMN2300UFB4-7B
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of DiodesZetex N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 Diodes Inc DMN2300UFB4-7B | |
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