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Infineon N-Channel MOSFET, 36 A, 100 V, 3-Pin D2PAK IRL540NSTRLPBF

About The Infineon N-Channel MOSFET, 36 A, 100 V, 3-Pin D2PAK IRL540NSTRLPBF, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 63 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 140 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Forward Diode Voltage: 1.3V

Infineon N-Channel MOSFET, 36 A, 100 V, 3-Pin D2PAK IRL540NSTRLPBF, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 63 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 140 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Forward Diode Voltage: 1.3V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 36 A, 100 V, 3-Pin D2PAK IRL540NSTRLPBF

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 36 A, 100 V, 3-Pin D2PAK IRL540NSTRLPBF

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Infineon N-Channel MOSFET, 36 A, 100 V, 3-Pin D2PAK IRL540NSTRLPBF
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