Infineon Dual N-Channel MOSFET, 20 A, 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N10S436AATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.036 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Series: OptiMOS™-T2
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon Dual N-Channel MOSFET, 20 A, 100 V, 8-Pin SuperSO8 5 X 6 Dual IPG20N10S436AATMA1
Specifications of Infineon Dual N-Channel MOSFET, 20 A, 100 V, 8-Pin SuperSO8 5 X 6 Dual IPG20N10S436AATMA1 | |
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