Infineon P-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON BSZ086P03NS3GATMA1
About The 9V, Minimum Gate Threshold Voltage: 3.Infineon P-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON BSZ086P03NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13
Infineon P-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON BSZ086P03NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.9V, Minimum Gate Threshold Voltage: 3.1V, Maximum Power Dissipation: 69 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Length: 3.4mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon P-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON BSZ086P03NS3GATMA1
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Infineon P-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON BSZ086P03NS3GATMA1 | |
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