Vishay N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220AB SUP50020E-GE3, Mounting Type: Through Hole, Pin Count: 3 + Tab, Maximum Drain Source Resistance: 2.8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.5V
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Vishay N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220AB SUP50020E-GE3
Specifications of Vishay N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220AB SUP50020E-GE3 | |
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