Infineon N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK IPD100N04S402ATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.3V
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK IPD100N04S402ATMA1
Specifications of Infineon N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK IPD100N04S402ATMA1 | |
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