IXYS N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-3PN IXFQ60N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.3mm, Length: 15.8mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
IXYS N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-3PN IXFQ60N50P3
Specifications of IXYS N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-3PN IXFQ60N50P3 | |
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