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IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3

About The 59mm, Length: 20.89 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 56 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.89 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3

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IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3
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