Infineon N-Channel MOSFET, 120 MA, 600 V, 3-Pin SOT-223 BSP125H6327XTSA1
About The 3V, Minimum Gate Threshold Voltage: 1.3V, Maximum Power Dissipation: 1
Infineon N-Channel MOSFET, 120 mA, 600 V, 3-Pin SOT-223 BSP125H6327XTSA1, Mounting Type: Surface Mount, Pin Count: 3 + Tab, Maximum Drain Source Resistance: 45 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Minimum Gate Threshold Voltage: 1.3V, Maximum Power Dissipation: 1.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.6mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 120 MA, 600 V, 3-Pin SOT-223 BSP125H6327XTSA1
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Infineon N-Channel MOSFET, 120 MA, 600 V, 3-Pin SOT-223 BSP125H6327XTSA1 | |
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