Infineon N-Channel MOSFET, 1.8 A, 100 V, 3-Pin SOT-223 BSP372NH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 270 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.8V, Minimum Gate Threshold Voltage: 0.8V, Maximum Power Dissipation: 1.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.5mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 1.8 A, 100 V, 3-Pin SOT-223 BSP372NH6327XTSA1
Specifications of Infineon N-Channel MOSFET, 1.8 A, 100 V, 3-Pin SOT-223 BSP372NH6327XTSA1 | |
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