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ROHM SiC N-Channel MOSFET, 14 A, 1200 V, 3-Pin TO-247N SCT2280KEHRC11

About The 28 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V.ROHM SiC N-Channel MOSFET, 14 A, 1200 V, 3-Pin TO-247N SCT2280KEHRC11, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0

ROHM SiC N-Channel MOSFET, 14 A, 1200 V, 3-Pin TO-247N SCT2280KEHRC11, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.28 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

ROHM SiC N-Channel MOSFET, 14 A, 1200 V, 3-Pin TO-247N SCT2280KEHRC11

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of ROHM SiC N-Channel MOSFET, 14 A, 1200 V, 3-Pin TO-247N SCT2280KEHRC11

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ROHM SiC N-Channel MOSFET, 14 A, 1200 V, 3-Pin TO-247N SCT2280KEHRC11
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