Infineon N-Channel MOSFET, 6 A, 800 V, 3-Pin DPAK SPD06N80C3ATMA1
About The Infineon N-Channel MOSFET, 6 A, 800 V, 3-Pin DPAK SPD06N80C3ATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.9 Ω, Maximum Gate Threshold Voltage: 3
Infineon N-Channel MOSFET, 6 A, 800 V, 3-Pin DPAK SPD06N80C3ATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.9 Ω, Maximum Gate Threshold Voltage: 3.9V, Series: CoolMOS
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 6 A, 800 V, 3-Pin DPAK SPD06N80C3ATMA1
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Infineon N-Channel MOSFET, 6 A, 800 V, 3-Pin DPAK SPD06N80C3ATMA1 | |
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