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DiodesZetex Dual P-Channel MOSFET, 4.8 A, 60 V, 8-Pin SOIC Diodes Inc ZXMP6A18DN8TA

About The 1 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +150 °C.8 A, 60 V, 8-Pin SOIC Diodes Inc ZXMP6A18DN8TA, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2

DiodesZetex Dual P-Channel MOSFET, 4.8 A, 60 V, 8-Pin SOIC Diodes Inc ZXMP6A18DN8TA, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.1 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

DiodesZetex Dual P-Channel MOSFET, 4.8 A, 60 V, 8-Pin SOIC Diodes Inc ZXMP6A18DN8TA

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of DiodesZetex Dual P-Channel MOSFET, 4.8 A, 60 V, 8-Pin SOIC Diodes Inc ZXMP6A18DN8TA

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DiodesZetex Dual P-Channel MOSFET, 4.8 A, 60 V, 8-Pin SOIC Diodes Inc ZXMP6A18DN8TA
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