Infineon N-Channel MOSFET, 63 A, 100 V, 3-Pin IPAK IRLU3110ZPBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 14 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 140 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 6.1mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 63 A, 100 V, 3-Pin IPAK IRLU3110ZPBF
Specifications of Infineon N-Channel MOSFET, 63 A, 100 V, 3-Pin IPAK IRLU3110ZPBF | |
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