Infineon N-Channel MOSFET, 26 A, 1200 V, 4-Pin TO-247-4 IMZ120R090M1HXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 90 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V
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Infineon N-Channel MOSFET, 26 A, 1200 V, 4-Pin TO-247-4 IMZ120R090M1HXKSA1
Specifications of Infineon N-Channel MOSFET, 26 A, 1200 V, 4-Pin TO-247-4 IMZ120R090M1HXKSA1 | |
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