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Infineon N-Channel MOSFET, 386 A, 40 V, 3-Pin TO-262WL AUIRF3004WL

About The Infineon N-Channel MOSFET, 386 A, 40 V, 3-Pin TO-262WL AUIRF3004WL, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 11

Infineon N-Channel MOSFET, 386 A, 40 V, 3-Pin TO-262WL AUIRF3004WL, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 11.3mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 386 A, 40 V, 3-Pin TO-262WL AUIRF3004WL

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 386 A, 40 V, 3-Pin TO-262WL AUIRF3004WL

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Infineon N-Channel MOSFET, 386 A, 40 V, 3-Pin TO-262WL AUIRF3004WL
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