Infineon N-Channel MOSFET, 386 A, 40 V, 3-Pin TO-262WL AUIRF3004WL, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 11.3mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 386 A, 40 V, 3-Pin TO-262WL AUIRF3004WL
Specifications of Infineon N-Channel MOSFET, 386 A, 40 V, 3-Pin TO-262WL AUIRF3004WL | |
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