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Vishay P-Channel MOSFET, 14.9 A, 30 V, 8-Pin SO-8 SI4825DDY-T1-GE3

About The 0205 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.

Vishay P-Channel MOSFET, 14.9 A, 30 V, 8-Pin SO-8 SI4825DDY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0205 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Series: TrenchFET

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Vishay P-Channel MOSFET, 14.9 A, 30 V, 8-Pin SO-8 SI4825DDY-T1-GE3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay P-Channel MOSFET, 14.9 A, 30 V, 8-Pin SO-8 SI4825DDY-T1-GE3

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Vishay P-Channel MOSFET, 14.9 A, 30 V, 8-Pin SO-8 SI4825DDY-T1-GE3
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    • Vishay P-Channel MOSFET, 14.9 A, 30 V, 8-Pin SO-8 SI4825DDY-T1-GE3

    Vishay P-Channel MOSFET, 14.9 A, 30 V, 8-Pin SO-8 SI4825DDY-T1-GE3

    Vishay P-Channel MOSFET, 14.9 A, 30 V, 8-Pin SO-8 SI4825DDY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.

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    • Vishay P-Channel MOSFET, 14.9 A, 30 V, 8-Pin SO-8 SI4825DDY-T1-GE3

    Vishay P-Channel MOSFET, 14.9 A, 30 V, 8-Pin SO-8 SI4825DDY-T1-GE3

    0205 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Series: TrenchFET.Vishay P-Channel MOSFET, 14.

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