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Wolfspeed SiC N-Channel MOSFET, 19 A, 1200 V, 3-Pin TO-247 C2M0160120D

About The 4V, Maximum Power Dissipation: 125 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -5 V, +20 V, Forward Diode Voltage: 3.5V, Minimum Gate Threshold Voltage: 2

Wolfspeed SiC N-Channel MOSFET, 19 A, 1200 V, 3-Pin TO-247 C2M0160120D, Mounting Type: Through Hole, Maximum Drain Source Resistance: 196 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 125 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -5 V, +20 V, Forward Diode Voltage: 3.3V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Wolfspeed SiC N-Channel MOSFET, 19 A, 1200 V, 3-Pin TO-247 C2M0160120D

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Wolfspeed SiC N-Channel MOSFET, 19 A, 1200 V, 3-Pin TO-247 C2M0160120D

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Wolfspeed SiC N-Channel MOSFET, 19 A, 1200 V, 3-Pin TO-247 C2M0160120D
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