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Vishay N-Channel MOSFET, 10 A, 40 V, 8-Pin SOIC SI4840BDY-T1-GE3

About The Vishay N-Channel MOSFET, 10 A, 40 V, 8-Pin SOIC SI4840BDY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.56 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +150 °C

Vishay N-Channel MOSFET, 10 A, 40 V, 8-Pin SOIC SI4840BDY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.56 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Vishay N-Channel MOSFET, 10 A, 40 V, 8-Pin SOIC SI4840BDY-T1-GE3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay N-Channel MOSFET, 10 A, 40 V, 8-Pin SOIC SI4840BDY-T1-GE3

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Vishay N-Channel MOSFET, 10 A, 40 V, 8-Pin SOIC SI4840BDY-T1-GE3
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