Onsemi N-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK NTBS2D7N06M7
About The onsemi N-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK NTBS2D7N06M7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 176 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.25V
onsemi N-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK NTBS2D7N06M7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 176 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.25V
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi N-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK NTBS2D7N06M7
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Onsemi N-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK NTBS2D7N06M7 | |
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