Infineon Silicon N-Channel MOSFET, 9 A, 650 V, 3-Pin DPAK IPD60R280CFD7ATMA1, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.28 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Series: CoolMOS
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon Silicon N-Channel MOSFET, 9 A, 650 V, 3-Pin DPAK IPD60R280CFD7ATMA1
Specifications of Infineon Silicon N-Channel MOSFET, 9 A, 650 V, 3-Pin DPAK IPD60R280CFD7ATMA1 | |
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