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Infineon Silicon N-Channel MOSFET, 63 A, 60 V, 8-Pin TSDSON-8 FL BSZ068N06NSATMA1

About The Infineon Silicon N-Channel MOSFET, 63 A, 60 V, 8-Pin TSDSON-8 FL BSZ068N06NSATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0068 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3

Infineon Silicon N-Channel MOSFET, 63 A, 60 V, 8-Pin TSDSON-8 FL BSZ068N06NSATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0068 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.3V, Series: OptiMOSTM3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon Silicon N-Channel MOSFET, 63 A, 60 V, 8-Pin TSDSON-8 FL BSZ068N06NSATMA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon Silicon N-Channel MOSFET, 63 A, 60 V, 8-Pin TSDSON-8 FL BSZ068N06NSATMA1

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Infineon Silicon N-Channel MOSFET, 63 A, 60 V, 8-Pin TSDSON-8 FL BSZ068N06NSATMA1
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