Infineon N-Channel MOSFET, 45 A, 60 V, 3-Pin TO-220 IPP060N06NAKSA1
About The 1V, Maximum Power Dissipation: 83 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.Infineon N-Channel MOSFET, 45 A, 60 V, 3-Pin TO-220 IPP060N06NAKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3
Infineon N-Channel MOSFET, 45 A, 60 V, 3-Pin TO-220 IPP060N06NAKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.3V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 83 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.36mm, Maximum Operating Temperature: +175 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 45 A, 60 V, 3-Pin TO-220 IPP060N06NAKSA1
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Infineon N-Channel MOSFET, 45 A, 60 V, 3-Pin TO-220 IPP060N06NAKSA1 | |
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