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Infineon N-Channel MOSFET, 19 A, 200 V, 7-Pin DirectFET ISOMETRIC

About The Infineon N-Channel MOSFET, 19 A, 200 V, 7-Pin DirectFET ISOMETRIC, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Series: HEXFET, MPN: IRF6785MTRPBF

Infineon N-Channel MOSFET, 19 A, 200 V, 7-Pin DirectFET ISOMETRIC, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Series: HEXFET, MPN: IRF6785MTRPBF

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 19 A, 200 V, 7-Pin DirectFET ISOMETRIC

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 19 A, 200 V, 7-Pin DirectFET ISOMETRIC

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Infineon N-Channel MOSFET, 19 A, 200 V, 7-Pin DirectFET ISOMETRIC
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