Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 15.94mm, Maximum Operating Temperature: +150 °C
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Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S
Specifications of Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S | |
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