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Infineon N-Channel MOSFET, 6 A, 700 V, 3-Pin SOT-223

About The 5V, Number of Elements per Chip: 1, Series: 700V CoolMOS™ P7, MPN: IPN70R900P7SATMA1.9 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3

Infineon N-Channel MOSFET, 6 A, 700 V, 3-Pin SOT-223, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.9 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Number of Elements per Chip: 1, Series: 700V CoolMOS™ P7, MPN: IPN70R900P7SATMA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 6 A, 700 V, 3-Pin SOT-223

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 6 A, 700 V, 3-Pin SOT-223

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Infineon N-Channel MOSFET, 6 A, 700 V, 3-Pin SOT-223
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